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Excimer laser assisted selective epitaxy of GaP

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Abstract

An ArF excimer laser has been used to achieve homoepitaxy of GaP at 500° C using trimethylgallium and tertiarybutylphosphine as the precursor gases. Dependence of epitaxial growth on several parameters is examined. The crystalline properties of the films are determined using cross-sectional transmission electron microscopy. It is found that at 500° C, in the presence of laser radiation, higher growth rate and superior crystalline properties of GaP are achieved compared to purely thermal metalorganic vapor phase epitaxy under the same conditions. Electrical properties of p-n diodes fabricated via Zn doping have also been examined.

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Authors and Affiliations

  1. Department of Applied Physics and Electrical Engineering, Oregon Graduate Institute, 97006-1999, Beaverton, OR, USA

    U. Sudarsan, N. W. Cody, T. Dosluoglu & R. Solanki

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  1. U. Sudarsan
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  2. N. W. Cody
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  3. T. Dosluoglu
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  4. R. Solanki
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Sudarsan, U., Cody, N.W., Dosluoglu, T. et al. Excimer laser assisted selective epitaxy of GaP. Appl. Phys. A 50, 325–330 (1990). https://doi.org/10.1007/BF00324501

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  • DOI: https://doi.org/10.1007/BF00324501

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