References
T. Hase and T. Shiosaki, Jpn. J. Appl. Phys. 30 (1991) 2159.
S. T. Hsu and I. H. Kalish, Integrated Ferroelectrics 2 (1992) 179.
J. F. Scott, B. M. Melnick, C. A. Araujo, L. D. Mcmillan and R. Zuleez, ibid. 1 (1992) 323.
C. Sudhama, J. Kim, J. Lee and V. Bhikarmane, J. Vac. Sci. TechnoL. B11 (1993) 1302.
M. Cohring, “The materials science of thin films” (Academic Press, 1992) p. 465.
W. Antpohler, G. W. Dietz and M. Klee, 4th International Conference on Electronic Ceramics and Applications, Vol. 1, 1994, p. 169.
H. Hu and S. B. Krupanidhi, J. Mater. ReS. 9 (1994) 1484.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Hwang, Y.S., Paek, S.H. & Mah, J.P. The leakage current mechanism of PZT thin films deposited by in-situ sputtering. J Mater Sci Lett 15, 1030–1031 (1996). https://doi.org/10.1007/BF00274897
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00274897