Abstract
Chemical vapour deposition (CVD) has become the standard method for the fabrication of microelectronic devices for use in the semiconductor industry. In this investigation, it has been used to grow films of silicon dioxide (SiO2) and borophosphosilicate glass (BPSG) at both atmospheric and low pressures under various conditions. The growth behaviour of SiO2 and BPSG films has been investigated as a function of the O2/SiH4 ratio. Both processes give a similar trend, with the growth rates of BPSG being somewhat higher than SiO2. The variation in the growth rate with O2/SiH4 ratio has been explained in terms of relative transport and kinetic reaction rates. The effects of temperature on the deposition rate have also been studied and the activation energy calculated showed two distinct regions corresponding to mass transport control and kinetic control regimes. Both BPSG and SiO2 have been annealed under various furnacing conditions. It has been shown that the addition of boron and phosphorous results in much lower reflow temperatures and times. This has a significant bearing on the performance characteristics of devices. Initial results from rapid thermal annealing (RTA) work are also presented, and RTA is shown to be a viable annealing process.
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Ahmed, W., Ahmed, E. & Dost, A.A. Chemical vapour deposition (CVD) of borophosphosilicate glass films. J Mater Sci: Mater Electron 7, 127–131 (1996). https://doi.org/10.1007/BF00225635
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DOI: https://doi.org/10.1007/BF00225635