Skip to main content

Effect of Scandium Doping on Crystallization Kinetics and Glass Transition of Te(1−x) (GeSe0.5) Scx (X = 0.1) Glassy Alloy for PCM Applications

  • Conference paper
  • First Online:
VLSI, Communication and Signal Processing (VCAS 2022)

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 1024))

Included in the following conference series:

  • 331 Accesses

Abstract

Transition kinetics study is an important field in the analysis crystallization and glassy behavior. Crystallization and glass transition kinetics of Te(1−x) (GeSe0.5)Scx (x = 0.1) glass alloy have been reported using theoretical and experimental methods. Melt-quench technique was used for preparing the samples. Differential scanning calorimetry (DSC) has been done at various heating rates (5, 10, 15, and 20 K/min). Glass transition activation energy showed a change with a fraction of conversion \({\chi }_{\text{g}}\). Activation energy Et has been calculated using different models: Moynihan and Kissinger models. Though, obtained \({E}_{t}\) values were evaluated by using the Moynihan model agreed by the Kissinger method used for attaining decomposition reaction activation energy. Iso-conversional methods have also been used for evaluating Et such as Kissinger–Akahira–Sunose (KAS), Flynn–Wall–Ozawa (FWO), and Tang methods. Results attained experimentally were compared by the calculated values from different models, Johnson–Mehl–Avrami (JMA) and theoretical method developed (TMD) model, and the TMD model was noticed to satisfy with experimental values.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 259.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD 329.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. Cárdenas-Leal JL, Vázquez J, García-G. Barreda D, López-Alemany PL, González-Palma R, Villares P (2012) A study on the glass-crystal transformation under non-isothermal regime: evaluation of the crystallization kinetics of the Ag 0.24As 0.30Se 0.46 glassy semiconductor by using the theoretical method developed (TMD) and a model-fitting approach. J Alloys Compd 544:188–196. https://doi.org/10.1016/j.jallcom.2012.07.139

  2. Cárdenas-Leal JL, Vázquez J, López-Alemany PL, Villares P, Jiménez-Garay R (2009) A study on the non-isothermal transformation kinetics of glassy alloys when the nucleation frequency and crystal growth rate depend on time as a power law. Application to the crystallization of the Ag0.16As0.42Se0.42 semiconductor glass. J Alloy Compd 471:44–51. https://doi.org/10.1016/j.jallcom.2008.03.043

    Article  Google Scholar 

  3. Ding K, Chen B, Chen Y, Wang J, Shen X, Rao F (2020) Recipe for ultrafast and persistent phase-change memory materials. NPG Asia Mater. https://doi.org/10.1038/s41427-020-00246-z

    Article  Google Scholar 

  4. Joraid AA (2005) Limitation of the Johnson-Mehl-Avrami (JMA) formula for kinetic analysis of the crystallization of a chalcogenide glass. Thermochim Acta 436:78–82. https://doi.org/10.1016/j.tca.2005.07.005

    Article  Google Scholar 

  5. Lad KN, Savalia RT, Pratap A, Dey GK, Banerjee S (2008) Isokinetic and isoconversional study of crystallization kinetics of a Zr-based metallic glass. Thermochim Acta 473:74–80. https://doi.org/10.1016/j.tca.2008.04.011

    Article  Google Scholar 

  6. Lafi OA, Imran MMA, Abdullah MK (2007) Glass transition activation energy, glass-forming ability and thermal stability of Se90In10-xSnx (x = 2, 4, 6 and 8) chalcogenide glasses. Phys B 395:69–75. https://doi.org/10.1016/j.physb.2007.02.026

    Article  Google Scholar 

  7. Liddell HM (1969) Optical properties of thin films. Opt Acta 16:661–664. https://doi.org/10.1080/713818200

    Article  Google Scholar 

  8. Patial BS, Thakur N, Tripathi SK (2011) Crystallization study of Sn additive Se-Te chalcogenide alloys. J Therm Anal Calorim 106:845–852. https://doi.org/10.1007/s10973-011-1579-5

    Article  Google Scholar 

  9. Rao V, Dwivedi DK (2017) Glass transition kinetics and thermal stability of Se82-xTe18Sbx (x = 0, 4, 8 and 12 at %) glassy alloys. J Mater Sci Mater Electron 28:6208–6216. https://doi.org/10.1007/s10854-016-6300-9

    Article  Google Scholar 

  10. Rao V, Singh PK, Lohia P, Dwivedi DK (2022) Non-isothermal crystallization kinetics of Se82-xTe18Gex (0 ≤ x ≤ 12) for memory applications. Indian J Phys 96:1075–1085. https://doi.org/10.1007/s12648-021-02036-x

    Article  Google Scholar 

  11. Raoux S, Xiong F, Wuttig M, Pop E (2014) Phase change materials and phase change memory. MRS Bull 39:703–710. https://doi.org/10.1557/mrs.2014.139

    Article  Google Scholar 

  12. Sen RI, Kumar S, Singh RK, Singh P, Singh K (2015) Electrical conduction mechanism in Se90-xTe5Sn5Inx (x = 0, 3, 6 and 9) multi-component glassy alloys. AIP Adv 5:7. https://doi.org/10.1063/1.4929577

    Article  Google Scholar 

  13. Shaaban ER, Kansal I, Shapaan M, Ferreira JMF (2009) Thermal stability and crystallization kinetics of ternary Se-Te-Sb semiconducting glassy alloys. J Therm Anal Calorim 98:347–354. https://doi.org/10.1007/s10973-009-0313-z

    Article  Google Scholar 

  14. Singh PK, Sharma SK, Tripathi SK, Dwivedi DK (2019) Study of dielectric relaxation and thermally activated a.c. conduction in multicomponent Ge10-xSe60Te30Inx (0 ≤ x ≤ 6) chalcogenide glasses using CBH model. Result Phys 12:223–236. https://doi.org/10.1016/j.rinp.2018.11.048

    Article  Google Scholar 

  15. Xu S, Wu W, Huang Y, Zhu X, Shen B, Zhai J, Yue Z (2021) Performance improvement of Sb phase change thin film by Y doping. ECS J Solid State Sci Technol 10:093002. https://doi.org/10.1149/2162-8777/ac2079

    Article  Google Scholar 

  16. Zhao J, Yuan Z, Song WX, Song Z (2022) High performance of Er-doped Sb2Te material used in phase change memory. J Alloy Compd 889:161701. https://doi.org/10.1016/j.jallcom.2021.161701

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to D. K. Dwivedi .

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2023 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

About this paper

Check for updates. Verify currency and authenticity via CrossMark

Cite this paper

Agarwal, S., Lohia, P., Dwivedi, D.K. (2023). Effect of Scandium Doping on Crystallization Kinetics and Glass Transition of Te(1−x) (GeSe0.5) Scx (X = 0.1) Glassy Alloy for PCM Applications. In: Nagaria, R.K., Tripathi, V.S., Zamarreno, C.R., Prajapati, Y.K. (eds) VLSI, Communication and Signal Processing. VCAS 2022. Lecture Notes in Electrical Engineering, vol 1024. Springer, Singapore. https://doi.org/10.1007/978-981-99-0973-5_5

Download citation

  • DOI: https://doi.org/10.1007/978-981-99-0973-5_5

  • Published:

  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-99-0972-8

  • Online ISBN: 978-981-99-0973-5

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics