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Temperature-Dependent Analog, RF, and Linearity Analysis of Junctionless Quadruple Gate MOSFETs for Analog Applications

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Advances in VLSI, Communication, and Signal Processing

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 587))

Abstract

In this paper, junctionless quadruple gate (JLQG) MOSFET is analyzed for its temperature-dependent characteristics. The junctionless MOSFET makes manufacturing simpler because it has no p-n junction as the doping of the channel is same as source/drain (S/D) region. Various performance parameters for short channel effects (SCEs), analog/RF, and linearity distortion of the JLQG MOSFET such as drain current (ID), transconductance (gm1), transconductance generation factor (TGF), output conductance (gd), early voltage (VEA), intrinsic gain (gm/gd), cut-off frequency (fT), gain frequency product (GFP), transconductance frequency product (TFP), gain trans-conductance frequency product (GTFP), second order derivative (gm2), third order derivative (gm3), second order voltage intercept point (VIP2), third order voltage intercept point (VIP3), third order input intercept point (IIP3), and third order intermodulation distortion (IMD3) with respect to temperature variations are presented and discussed. The study reveals the different zero-crossing points for temperature-dependent characteristics leading to guidelines for temperature-insensitive designs using JLQG MOSFETs.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, 211004, India

    Prateek Kishor Verma, Akash Singh Rawat & Santosh Kumar Gupta

Authors
  1. Prateek Kishor Verma
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  2. Akash Singh Rawat
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  3. Santosh Kumar Gupta
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Corresponding authors

Correspondence to Prateek Kishor Verma or Santosh Kumar Gupta .

Editor information

Editors and Affiliations

  1. Ministry of Electronics and Information Technology, New Delhi, Delhi, India

    Debashis Dutta

  2. Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh, India

    Haranath Kar

  3. Indian Institute of Technology (ISM), Dhanbad, Jharkhand, India

    Chiranjeev Kumar

  4. Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh, India

    Vijaya Bhadauria

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Verma, P.K., Rawat, A.S., Gupta, S.K. (2020). Temperature-Dependent Analog, RF, and Linearity Analysis of Junctionless Quadruple Gate MOSFETs for Analog Applications. In: Dutta, D., Kar, H., Kumar, C., Bhadauria, V. (eds) Advances in VLSI, Communication, and Signal Processing. Lecture Notes in Electrical Engineering, vol 587. Springer, Singapore. https://doi.org/10.1007/978-981-32-9775-3_32

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  • DOI: https://doi.org/10.1007/978-981-32-9775-3_32

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-32-9774-6

  • Online ISBN: 978-981-32-9775-3

  • eBook Packages: EngineeringEngineering (R0)

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