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Quantum Anomalous Hall Effect in Magnetic Topological Insulator

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Quantum Hybrid Electronics and Materials

Part of the book series: Quantum Science and Technology ((QST))

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Abstract

The quantum anomalous Hall effect (QAHE) is one of the hallmark phenomena associated with topological properties of the electronic band structure. When an electric current flows in a ferromagnetic topological insulator, the Hall resistance orthogonal to both current and magnetization is quantized to the von Klitzing constant \(h/e^2\), where h is the Planck’s constant and e is the elementary charge. The QAHE shares many phenomenological features with the quantum Hall effect in two-dimensional electron systems under strong magnetic fields despite the different microscopic origins of the phenomena. In this chapter, we review the basic concept and emerging properties of the QAHE. In particular, we discuss the transport properties in the engineered magnetic heterostructure films of topological insulators which have provided a unique platform to study emergent topological phenomena.

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Acknowledgements

The author thanks R. Yoshimi, K. Yasuda, M. Mogi, A. Tsukazaki, T. Morimoto, N. Nagaosa, M. Kawasaki, and Y. Tokura for enlightening discussions. This research was supported in part by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan (No. 15H05867) and Core Research for Evolutional Science and Technology (CREST), Japanese Science and Technology (JST, No. JPMJCR16F1).

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  1. RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, 351-0198, Japan

    Minoru Kawamura

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  1. Minoru Kawamura
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Correspondence to Minoru Kawamura .

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  1. Tohoku University, Sendai, Miyagi, Japan

    Yoshiro Hirayama

  2. Institute of Industrial Science, The University of Tokyo, Tokyo, Japan

    Kazuhiko Hirakawa

  3. NTT Basic Research Laboratories, Atsugi, Kanagawa, Japan

    Hiroshi Yamaguchi

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Kawamura, M. (2022). Quantum Anomalous Hall Effect in Magnetic Topological Insulator. In: Hirayama, Y., Hirakawa, K., Yamaguchi, H. (eds) Quantum Hybrid Electronics and Materials. Quantum Science and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-19-1201-6_9

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