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BTI Analysis Tool (BAT) Model Framework—Generation of Interface Traps

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Recent Advances in PMOS Negative Bias Temperature Instability

Abstract

In this chapter, the RD model is described to simulate the time kinetics of interface traps. The model uses inversion layer (cold) hole induced dissociation of Hydrogen passivated interfacial defects and defect-assisted conversion of atomic into molecular species (and reverse processes) in the gate insulator bulk during (and after) stress. The model is independently validated using DCIV measured data under DC and AC NBTI stress, from planar MOSFETs with different Nitrogen content in the gate insulator and FinFETs with different Germanium content in the channel. The process dependence is explained, and the validity of the physical mechanism and model parameters are discussed.

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Acknowledgements

All experimental data presented in this chapter are re-plotted from previously published reports. One of the authors (Souvik Mahapatra) acknowledges Muhammad Ashraful Alam and Ahmed Ehteshamul Islam for discussion on defect kinetics modeling. The authors acknowledge applied materials for providing planar MOSFETs and IBM for providing measurement facilities and FinFETs. One of the authors (Narendra Parihar) acknowledges Richard Southwick, Miaomiao Wang and James Stathis for help with measurement facilities. Karansingh Thakor is acknowledged for help with manuscript preparation.

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Authors and Affiliations

  1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India

    Souvik Mahapatra, Narendra Parihar, Subhadeep Mukhopadhyay & Nilesh Goel

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  1. Souvik Mahapatra
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  2. Narendra Parihar
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  3. Subhadeep Mukhopadhyay
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  4. Nilesh Goel
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Correspondence to Souvik Mahapatra .

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  1. Department of Electrical Engineering, IIT Bombay, Mumbai, India

    Souvik Mahapatra

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Mahapatra, S., Parihar, N., Mukhopadhyay, S., Goel, N. (2022). BTI Analysis Tool (BAT) Model Framework—Generation of Interface Traps. In: Mahapatra, S. (eds) Recent Advances in PMOS Negative Bias Temperature Instability. Springer, Singapore. https://doi.org/10.1007/978-981-16-6120-4_4

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  • DOI: https://doi.org/10.1007/978-981-16-6120-4_4

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