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Abstract

The thermophysical properties including thermal and electrical conductivity and density of Sb–Te binary and Sb2Te3–GeTe pseudobinary chalcogenide alloys have great significance for the phase change random access memory (PCRAM) applications and scientific comprehension. The objectives of this book have been to provide the measuring technique and values of these properties for these alloys and to clarify the thermal conduction mechanisms. For the industrial applications, the prediction equations for thermal conductivities of these alloy systems have been proposed based on the thermal conductivity data and conduction mechanisms.

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Correspondence to Rui Lan .

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Lan, R. (2020). Summary and Conclusions. In: Thermophysical Properties and Measuring Technique of Ge-Sb-Te Alloys for Phase Change Memory. Springer, Singapore. https://doi.org/10.1007/978-981-15-2217-8_7

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