Abstract
Double Gate Metal Oxide Semiconductor Field Effect Transistors (DGMOSFET) have one of the emerged potential contenders in CMOS VLSI technology due to the fast switching applications. In this proposed work the implementation of symmetrical work function variation of the dual material (SWVDM) at the source end of In0.53Ga0.47As/InP DG MOSFET using 2D Sentaurus TCAD device simulator. The high-K HfO2 is used in order to minimize the leakage. Simulation result reveals the excellent analog performance metrics like drive current, On resistance, and transconductance as compared to single material (SM) In0.53Ga0.47As/InP DG hetero MOSFET.
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Mohanty, S.S., Mishra, S., Sathpathy, D., Mishra, G.P. (2020). An Extensive Simulation Based Study of Symmetrical Work Function Variation of In0.53Ga0.47As/InP DG Hetero MOSFET. In: Gunjan, V., Garcia Diaz, V., Cardona, M., Solanki, V., Sunitha, K. (eds) ICICCT 2019 – System Reliability, Quality Control, Safety, Maintenance and Management. ICICCT 2019. Springer, Singapore. https://doi.org/10.1007/978-981-13-8461-5_89
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