Skip to main content
SpringerLink
Log in

Performance Booster Electrical Drain SiGe Nanowire TFET (EDD-SiGe-NW-TFET) with DC Analysis and Optimization

  • Conference paper
  • First Online:
Information and Communication Technology for Intelligent Systems

Part of the book series: Smart Innovation, Systems and Technologies ((SIST,volume 107))

  • 1448 Accesses

Abstract

In this paper, new concept for TFET nanowire is proposed to eliminate the issues aroused in MOSFET due to continuous scaling the device dimensions. Proposed device uses the concept of electrically doping as well as physically doping. Other than that low band gap material, silicon germanium (SiGe), is used at source region and high k dielectric is used at source–channel interface to improve the performance of the proposed structure. Simulation is done using 3D TCAD ATLAS simulator, and result validates that the proposed device is suitable for low power application. Furthermore, simulation is done for the different diameters and channel lengths for optimization.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. International Technology Roadmap for Semiconductors (ITRS). www.itrs2.net

  2. Bangsaruntip, S., Cohen, G.M., Majumdar, A., Sleight, J.W.: Universality of short-channel effects in undoped-body silicon nanowire MOSFETs. IEEE Electron Device Lett. 31(9), 903–905 (2010). https://doi.org/10.1109/LED.2010.2052231

    Article  Google Scholar 

  3. Bhanu Chandar, D., Vadthiya, N., Kumar, A., Mishra, R.A.: Suppression of short channel effects (SCEs) by dual material gate vertical surrounding gate (DMGVSG) MOSFET: 3-D TCAD simulation. Int. Conf. Des. Manuf. 64, 125–132 (2013). https://doi.org/10.1016/j.proeng.2013.09.083

    Article  Google Scholar 

  4. Gopalakrishnan, K., Griffin, P.B., Plummer, J.D.: Impact ionization MOS (I-MOS)-Part I: device and circuit simulations. IEEE Trans. Electron Devices 52(1), 69–76 (2005). https://doi.org/10.1109/TED.2004.841344

    Article  Google Scholar 

  5. Cho, J., Geelhaar, F., Rana, U., Vanamurthy, L., Sporer, R., Benistant, F.: TCAD analysis of SiGe channel FinFET devices. IEEE conf. 357–360 (2017). https://doi.org/10.23919/SISPAD.2017.8085338

  6. Choi, W.Y., Park, B.G., Lee, J.D.: Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett. 28, 743–745 (2007). https://doi.org/10.1109/LED.2007.901273

    Article  Google Scholar 

  7. Boucart, K., Ionescu, A.M.: Double-gate tunnel FET with high-k gate dielectric. IEEE Trans. Electron Devices 54(7), 1725–1733 (2007). https://doi.org/10.1109/TED.2007.899389

    Article  Google Scholar 

  8. Kumar, M., Jit, S.: Effects of electrostatically doped source/drain and ferroelectric gate oxide on subthreshold swing and impact ionization rate of strained-si-on-insulator tunnel field-effect transistors. IEEE Trans. Nanotechnol. 14(4), 597–599 (2015). https://doi.org/10.1109/TNANO.2015.2426316

    Article  Google Scholar 

  9. Nadda, K., Kumar, M.J.: Thin-film bipolar transistors on recrystallized polycrystalline silicon without impurity doped junctions: proposal and investigation. 10(7), 590–594 (2014). https://doi.org/10.1109/JDT.2014.2310124

    Article  Google Scholar 

  10. ATLAS Device Simulation Software, Silvaco International. Santa Clara, CA, USA (2014)

    Google Scholar 

Download references

Acknowledgements

The authors would like to thank the Science and Engineering Research Board, Department of Science and Technology, Government of India (established through an act of parliament) for providing the financial support to carry out this work. As this work has been implemented under the project “Implementation of Sigma Delta Modulator Using Nanowire Electrically Doped Hetero Material Tunnel Field Effect Transistor (TFET) for Ultra Low Power Applications” which is funded by this board.

Author information

Authors and Affiliations

  1. PDPM IIITDM, Jabalpur, Madhya Pradesh, India

    Jyoti Patel, Priyanka Suman, Alemienla Lemtur & Dheeraj Sharma

Authors
  1. Jyoti Patel
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Priyanka Suman
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Alemienla Lemtur
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Dheeraj Sharma
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Jyoti Patel .

Editor information

Editors and Affiliations

  1. School of Computer Engineering, KIIT Deemed to be University, Bhubaneswar, India

    Suresh Chandra Satapathy

  2. Sabar Institute of Technology, Gujarat Technological University, Ahmedabad, Gujarat, India

    Amit Joshi

Rights and permissions

Reprints and permissions

Copyright information

© 2019 Springer Nature Singapore Pte Ltd.

About this paper

Check for updates. Verify currency and authenticity via CrossMark

Cite this paper

Patel, J., Suman, P., Lemtur, A., Sharma, D. (2019). Performance Booster Electrical Drain SiGe Nanowire TFET (EDD-SiGe-NW-TFET) with DC Analysis and Optimization. In: Satapathy, S., Joshi, A. (eds) Information and Communication Technology for Intelligent Systems . Smart Innovation, Systems and Technologies, vol 107. Springer, Singapore. https://doi.org/10.1007/978-981-13-1747-7_55

Download citation

Publish with us

Policies and ethics

Search

Navigation