Abstract
One of the major roadblocks to further scaling of complementary metal-oxide semiconductor (CMOS) devices is power consumption. Reduction of power consumption requires low operation voltage, which requires low threshold voltage. In order to decrease the threshold voltage without excessive increase of OFF current, reduction of the subthreshold swing is essential. To reduce the subthreshold swing, various carrier injection mechanisms other than thermal carrier injection have been proposed. Currently, interband tunneling is the most promising mechanism and the device that utilizes such a mechanism is a tunneling field-effect transistor (TFET). After the introduction to the fundamentals of TFETs, various approaches to increase the drain current of Si TFETs by device structure engineering are described. The last section focuses on bandgap engineering to enhance the drain current of TFETs.
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This work is supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT and Future Planning as the Global Frontier Project.
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Park, BG. (2016). Tunneling Field-Effect Transistors for Ultra-Low-Power Application. In: Kyung, CM. (eds) Nano Devices and Circuit Techniques for Low-Energy Applications and Energy Harvesting. KAIST Research Series. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-9990-4_1
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DOI: https://doi.org/10.1007/978-94-017-9990-4_1
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