Abstract
We investigate theoretically the influence of indium surface segregation in InGaN/GaN single quantum wells on its optical properties. Obtained results show that the influence of the surface segregation on the dipole matrix element is not equal for all optical transition. This effect results from the joint action of the piezoelectric polarization and indium surface segregation which change selection rules. Quantum well structures having different indium amount are analyzed and found that the influence of the indium surface segregation on absorption spectra is more pronounced in quantum well structures with high indium amount, in particular it shall be taken into account in structures containing over 10 % of indium.
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Shulika, O.V., Klymenko, M.V., Sukhoivanov, I.A. (2016). Optical Properties of Ultrathin InGaN/GaN Quantum Wells Subject to Indium Surface Segregation. In: Shulika, O., Sukhoivanov, I. (eds) Contemporary Optoelectronics. Springer Series in Optical Sciences, vol 199. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-7315-7_3
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DOI: https://doi.org/10.1007/978-94-017-7315-7_3
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