Abstract
Films of a-SiC:H having different silicon contents have been deposited at room temperature by sputter assisted plasma CVD of a graphite target in a silane — argon atmosphere. The insertion of small amounts of silicon in the a-C:H network yield a material which has mechanical properties similar to DLC and optical gap up to 2.2 eV. The room temperature electrical conductivities are two orders of magnitude higher than typical PECVD deposited hydrogenated amorphous silicon carbide.
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© 1991 Springer Science+Business Media Dordrecht
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Demichelis, F., Giachello, G., Pirri, C.F., Tagliaferro, A., Spagnolo, R. (1991). Influence of Silicon on Properties of Hydrogenated Amorphous Carbon. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_32
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DOI: https://doi.org/10.1007/978-94-011-3622-8_32
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