Abstract
A wide variety of analytical tools support the investigation of large area (0.4 m2) CuInSe2 (CIS) module development at Siemens Solar Industries. Small devices are sliced out of large area plates and studied using light and dark I-V and spectral response. Optical and electron micrographs characterize surface features and interfaces. These micrographs in conjunction with optical beam induced current (OBIC) images provide a detailed picture of the device response topography. Optical and electron micrographs of devices reveal no surface features or pinholes that correlate to the low output OBIC spots. However, tests reveal a high correlation of low adhesion and the low OBIC spots. These results guide the optimization of large area deposition and patterning equipment and procedures.
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© 1991 Springer Science+Business Media Dordrecht
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Willett, D., Aldrich, D., Chesarek, W., Mitchell, K. (1991). The Effect of Localized Defect Features on CuInSe2 Device Performance. In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_240
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DOI: https://doi.org/10.1007/978-94-011-3622-8_240
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-5607-6
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