Abstract
Copper Indium diselenide (CIS) was prepared by one step electrodeposition from an aqueous citric acid plating bath. Chemical analysis of the films were carried out in order to relate the composition of the films to the main parameters of the deposition process: deposition potential and solution composition. Optimal conditions were determined to obtain layers with composition close to the desired value in a suitable range of applied potentials. X-Ray diffraction showed the chalcopyrite structure of CIS but a post-deposition heat treatment has been found necessary to improve the quality of the as-deposited films. The absorption edge and the band gap were determined by optical measurements.
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© 1991 Springer Science+Business Media Dordrecht
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Thouin, L., Rouquette-Sanchez, S., Vedel, J. (1991). One Step Electrodeposition of CuInSe2 . In: Luque, A., Sala, G., Palz, W., Dos Santos, G., Helm, P. (eds) Tenth E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-3622-8_228
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DOI: https://doi.org/10.1007/978-94-011-3622-8_228
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-5607-6
Online ISBN: 978-94-011-3622-8
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