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GAMMA RAYS INDUCED CONVERSION OF NATIVE DEFECTS IN NATURAL SILICA

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Defects in SiO2 and Related Dielectrics: Science and Technology

Part of the book series: NATO Science Series ((NAII,volume 2))

Abstract

A conversion process, from diamagnetic to paramagnetic defects in natural silica samples, has been pointed out by combining measurements of optical and electron paramagnetic resonance spectroscopy. The conversion is induced by y irradiation and its rate has been found to depend on the OH content of a given silica type. The mechanism can be explained by a structural model in which the native optically active defect is a twofold coordinated Ge center and the β induced one is the so called H(II) center. The latter defect has been found to be unstable, as thermal treatments of the irradiated samples, at relatively low temperatures (T ≤ 430 K), restore completely the native concentration of diamagnetic defects.

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Author information

Authors and Affiliations

  1. Istituto Nazionale per la Fisica della Materia e Dipartimento di Scienze Fisiche e Astronomiche dell’Universita’, via Archirafi, 361-90123, Palermo, Italy

    F.M Gelardi & S. Agnello

Authors
  1. F.M Gelardi
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  2. S. Agnello
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Editor information

Editors and Affiliations

  1. Dipartimento di Scienza dei Materiali, Università Milano-Bicocca, Milano, Italy

    G. Pacchioni

  2. Institute of Solid State Physics, University of Latvia, Riga, Latvia

    L. Skuja

  3. Naval Research Laboratory, Washington DC, USA

    D. L. Griscom

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Gelardi, F., Agnello, S. (2000). GAMMA RAYS INDUCED CONVERSION OF NATIVE DEFECTS IN NATURAL SILICA. In: Pacchioni, G., Skuja, L., Griscom, D.L. (eds) Defects in SiO2 and Related Dielectrics: Science and Technology. NATO Science Series, vol 2. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0944-7_9

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  • DOI: https://doi.org/10.1007/978-94-010-0944-7_9

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-0-7923-6686-7

  • Online ISBN: 978-94-010-0944-7

  • eBook Packages: Springer Book Archive

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