Low Dimension Properties of Nanostructures on Ultrathin Layers of Silicon Formed by Oxidation of Ion Cut SOI Wafers and Electron Lithography

Abstract

High quality silicon-on-insulator (SOI) wafers with appreciable properties for quantum devices can be produced by very long time high temperature annealing of commercial SIMOX wafers [1] or by Internal Thermal Oxidation (ITOX) of low-dose SIMOX wafers [2]. A promising and elegant method to fabricate SOI is by ion cut technology [3]. High dose hydrogen implantation with subsequent annealing allows one to delaminate a thin layer of silicon from a thick substrate and to connect it to an oxidized silicon wafer. The main advantages of this technology are high quality buried oxide, top silicon layer, and high flatness of interface between layers [4]. The aim of this effort was to produce ultrathin SOI structures with different dopant concentration by oxidation, to fabricate nanoscale transistor using electron lithography and investigate the properties of these structures.