Abstract
In the fundamental phenomenon of blistering observed during implantation of gas ions into silicon, there remains a long-standing controversy concerning the mechanism of decay of the over-saturated solid solution of gas atoms and intrinsic point defects. The interest to this phenomenon has been drastically renewed in recent years due to its practical significance since blistering adds to the toolbox of SOI technology a useful method known as “Smart Cut” [1].
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Popov, V.P. et al. (2002). Defects and their Electronic Properties in High-Pressure-Annealed SOI Structures Sliced by Hydrogen. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_21
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DOI: https://doi.org/10.1007/978-94-010-0339-1_21
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