Abstract
Gate-Ail-Around (GAA) transistors are thin, fully depleted SOI MOSFETs with a double gate structure. When used at high temperature GAA devices present low leakage current, minimal threshold voltage shift and, in general, better characteristics than bulk or even SOI MOSFETs. The radiation hardness of GAA devices is reported as well, and the dose evolution of parameters such as threshold voltage, subthreshold slope and output conductance is analyzed.
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Colinge, J.P. (2002). Gate-All-Around Technology for Harsh Environment Applications. In: Balestra, F., Nazarov, A., Lysenko, V.S. (eds) Progress in SOI Structures and Devices Operating at Extreme Conditions. NATO Science Series, vol 58. Springer, Dordrecht. https://doi.org/10.1007/978-94-010-0339-1_12
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DOI: https://doi.org/10.1007/978-94-010-0339-1_12
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