Abstract
Boron doped silicon submitted to low energy hydrogen implantation performed at low current density (35 µA/cm2) in the temperature range 80 – 140°C shows a large decrease of the active doping concentration over a depth which increases with the temperature and the starting material resistivity. Annealing of as-implanted samples evidences that a significant reactivation of the dopant occurs above 100°C.
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© 1987 ECSC, EEC, EAEC, Brussels and Luxembourg
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Zundel, T., Muller, J.C., Siffert, P. (1987). Boron Neutralization by Hydrogen Ion Implantation in Silicon. In: Goetzberger, A., Palz, W., Willeke, G. (eds) Seventh E.C. Photovoltaic Solar Energy Conference. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3817-5_122
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DOI: https://doi.org/10.1007/978-94-009-3817-5_122
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