Abstract
The nucleation of diamond films grown by microwave plasma chemical vapor deposition on silicon substrates has been examined by Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and electron microscopy. Furthermore, cross sectional transmission electron microscopy (XTEM) was utilized to examine the diamond/silicon interface. The immediate (< 5 minutes) formation of a cubic SiC buffer layer was observed prior to the growth of a detectable diamond film. This SiC layer was too thin to be observed (< 10 monolayers) in XTEM when methane concentrations in the feedgas were relatively high (2.0%) but was observable via AES and XPS even at 3.0% CH4. At low concentrations (0.3% CH4) the SiC layer was relatively thick (∼5OÅ) and easily observed in XTEM.
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© 1990 Kluwer Academic Publishers
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Williams, B.E., Asbury, D.A., Glass, J.T. (1990). Surface Analysis of Diamond Nucleation on Silicon and Electron Microscopy of the Diamond/Silicon Interface. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_12
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DOI: https://doi.org/10.1007/978-94-009-2101-6_12
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