Abstract
Lanthanide oxides are important components in a range of optoelectronical materials such as lasers, diodes and light conversion materials. We have investigated the possibilities to use atomic layer deposition (ALD) for deposition of thin films of of the Ln2O3 (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) systems using the precursor combinations Ln(thd)3 + O3 (thd = 2,2,6,6-tetramethyl-3,5-dionato). The advantage of ALD is the possibilities of mixing different materials at the atomic level and at relatively low temperatures. This opens for synthesis of many new materials where controlled intermixing of elements is important. The results from this work have been used to deposit down conversion films based on europium doped titanium oxide.
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© 2013 Springer Science+Business Media Dordrecht
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Hansen, PA., Finstad, T., Fjellvåg, H., Nilsen, O. (2013). Atomic Layer Deposition of Lanthanide Oxides: Exemplified by Europium Oxide. In: Di Bartolo, B., Collins, J. (eds) Nano-Optics for Enhancing Light-Matter Interactions on a Molecular Scale. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-5313-6_35
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DOI: https://doi.org/10.1007/978-94-007-5313-6_35
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