Abstract
We report results on a field-effect induced light modulation at ? = 1.55 ?m in a high-index-contrast waveguide based on a multisilicon-on-insulator (MSOI) platform. The device is realized with the hydrogenated amorphous silicon (?-Si:H) technology and it is suitable for monolithic integration in a CMOS integrated circuit. The device exploits the free carrier optical absorption electrically induced in the multistack core waveguide.
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Acknowledgments
IMM-CNR (Naples, Italy) for optical simulations, G.T. Reed and W. Headley (University of Surrey, Guildford, UK) for helps in some experiments and for stimulating discussions.
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© 2011 Springer Science+Business Media B.V.
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Rao, S., Della Corte, F.G., Summonte, C. (2011). Electro-Optical Modulating Multistack Device Based on the CMOS-Compatible Technology of Amorphous Silicon. In: Neri, G., Donato, N., d'Amico, A., Di Natale, C. (eds) Sensors and Microsystems. Lecture Notes in Electrical Engineering, vol 91. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-1324-6_44
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DOI: https://doi.org/10.1007/978-94-007-1324-6_44
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