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An Oxygen Radical Source with High Electron Densities for Preparation of YBCO Thin Films

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Advances in Superconductivity V

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Abstract

We fabricated an oxygen radical source using plasma with an inductively coupled radio frequency, and applied it to the co-evaporative preparation of YBCO superconducting films. Tc’s of the obtained films exceeded 80K in spite of an extremely low oxygen partial pressure of 10−4 Pa.

The electron density of the plasma was estimated as 1013 cm−3. The high electron density caused a high concentration of the oxygen radical which resulted in the successful preparation of YBCO crystal in such low pressure.

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Author information

Authors and Affiliations

  1. Fuji Electric Corporate R&D, Ltd, Yokosuka, Kanagawa, 240-01, Japan

    Takeshi Suzuki, Toshiyuki Matsui, Akihiko Ohi, Takashi Ishi, Hiroshi Kimura, Koichi Tsuda & Kazuo Mukae

Authors
  1. Takeshi Suzuki
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  2. Toshiyuki Matsui
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  3. Akihiko Ohi
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  4. Takashi Ishi
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  5. Hiroshi Kimura
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  6. Koichi Tsuda
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  7. Kazuo Mukae
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Editor information

Editors and Affiliations

  1. Institute for Chemical Research, Kyoto University, Uji, Kyoto, 611, Japan

    Yoshichika Bando

  2. Superconductivity Research Laboratory, ISTEC, Koto-ku, Tokyo, 135, Japan

    Hisao Yamauchi

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© 1993 Springer-Verlag Tokyo

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Suzuki, T. et al. (1993). An Oxygen Radical Source with High Electron Densities for Preparation of YBCO Thin Films. In: Bando, Y., Yamauchi, H. (eds) Advances in Superconductivity V. Springer, Tokyo. https://doi.org/10.1007/978-4-431-68305-6_215

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  • DOI: https://doi.org/10.1007/978-4-431-68305-6_215

  • Publisher Name: Springer, Tokyo

  • Print ISBN: 978-4-431-68307-0

  • Online ISBN: 978-4-431-68305-6

  • eBook Packages: Springer Book Archive

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