Abstract
We present a simulational study on current oscillations in semiconductors with NDC (Negative Differential Conductivity) which brings nonlinear transport properties such that electric current decreases as increasing bias voltage. An one-dimensional model of gold-doped n-Ge has been proposed, and the computations have been performed under the boundary conditions with d.c. bias. We have found bifurcation diagrams from periodic to chaotic current oscillations, and studied dynamical response of the system to investigate its controllability.
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© 1997 Springer-Verlag Tokyo
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Oshio, Ki. (1997). Bifurcation and dynamical response of current oscillations in semiconductor with NDC. In: Nakamura, E.R., Kudo, K., Yamakawa, O., Tamagawa, Y. (eds) Complexity and Diversity. Springer, Tokyo. https://doi.org/10.1007/978-4-431-66862-6_22
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DOI: https://doi.org/10.1007/978-4-431-66862-6_22
Publisher Name: Springer, Tokyo
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