Abstract
In this chapter, the combinatorial synthesis techniques for the development of new thin-film materials for nanoelectronics are briefly introduced. Although this topic is not relating to the oxide thin-film materials directory, for the high-throughput material synthesis and systematic investigation, the combinatorial synthesis technique is effective. In former chapters, these techniques are used and have been effective. In the thin-film synthesis, technically, by combining a moving mask system and a target exchange system with physical thin-film growth methods, a ternary or binary composition spread thin-film sample can be obtained. In particular, in this chapter, combinatorial focused Ar ion-beam sputtering (FIBS), which is optimized for material research on new metal thin films and developed in NIMS, is mainly introduced.
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Nagata, T. (2020). Combinatorial Thin-Film Synthesis for New Nanoelectronics Materials. In: Nanoscale Redox Reaction at Metal/Oxide Interface. NIMS Monographs. Springer, Tokyo. https://doi.org/10.1007/978-4-431-54850-8_6
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