Abstract
In this chapter we will discuss the pn junction diode and MOSFET models, as implemented in Berkeley SPICE2G and higher versions. No attempt will be made to derive the model equations, as that has already been done at appropriate places in previous chapters. Here we will only describe equations used to model different regions of device operation. Emphasis will be on model parameters required to run SPICE and how to measure them.
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© 1993 Springer-Verlag/Wien
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Arora, N. (1993). SPICE Diode and MOSFET Models and Their Parameters. In: MOSFET Models for VLSI Circuit Simulation. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-9247-4_11
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DOI: https://doi.org/10.1007/978-3-7091-9247-4_11
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-9249-8
Online ISBN: 978-3-7091-9247-4
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