Skip to main content
SpringerLink
Log in

The Effect of Implantation Conditions on the Formation of SiC

  • Conference paper
Progress in Fourier Transform Spectroscopy

Part of the book series: Mikrochimica Acta Supplement ((MIKROCHIMICA,volume 14))

Abstract

Analysis of silicon implanted with 5 × 1017 C+ cm−2 and 2 × 1018 C+ cm−2 and annealed at 1200 °C for 30 min, revealed that the lower dose implantation produced a substantial yield of SiC, while the higher dose implantation resulted in the formation of carbon clusters which retarded the synthesis of SiC.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 39.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 54.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. G. Keiner, S. Binari, M. Shur, K. Sieger, J. Palmour, H. Kong Mat. Sci. Eng. 1992, B11, 121.

    Google Scholar 

  2. J. A. Borders, S. T. Picraux, W. Beezhold Appl. Phys. Lett. 1971, 18, 509.

    Article  CAS  Google Scholar 

  3. T. Kimura, S. Kagiyama, S. Yugo, Thin Solid Films 1982, 94, 191.

    Article  CAS  Google Scholar 

  4. K. K. Nussupov, V. O. Sigle, N. B. Bejsenkhanov, Nucl. Instrum Methods. Phys. Res. Sect. B 1993, 82, 69.

    Article  CAS  Google Scholar 

  5. A. R. Bean, R. C. Newman, J. Phys. Chem. Solids 1971, 32, 1211.

    Article  CAS  Google Scholar 

  6. W. G. Spitzer, D. A. Kleinman, C. J. Frosch, Phys. Rev. 1959, 113, 133.

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, University of Port Elizabeth, P. O. Box 1600, Port Elizabeth, 6000, Republic of South Africa

    Pearl R. Berndt, Johannes H. Neethling & Jacobus A. A. Engelbrecht

Authors
  1. Pearl R. Berndt
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Johannes H. Neethling
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Jacobus A. A. Engelbrecht
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Department of Analytical Chemistry, University of Veszprém, Veszprém, Hungary

    János Mink

  2. Institute of Isotopes, Hungarian Academy of Sciences, Budapest, Hungary

    János Mink

  3. Central Research Institute of Chemistry, Hungarian Academy of Sciences, Budapest, Hungary

    Gábor Keresztury

  4. Institut für Analytische Chemie, Technische Universität Wien, Wien, Austria

    Robert Kellner

Rights and permissions

Reprints and permissions

Copyright information

© 1997 Springer-Verlag Wien

About this paper

Cite this paper

Berndt, P.R., Neethling, J.H., Engelbrecht, J.A.A. (1997). The Effect of Implantation Conditions on the Formation of SiC. In: Mink, J., Keresztury, G., Kellner, R. (eds) Progress in Fourier Transform Spectroscopy. Mikrochimica Acta Supplement, vol 14. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6840-0_111

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-6840-0_111

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-211-82931-8

  • Online ISBN: 978-3-7091-6840-0

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation