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Performance optimization in Si/SiGe heterostructure FETs

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Simulation of Semiconductor Devices and Processes

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Abstract

In this paper we investigate the role of structure design in determining high effective mobility (µ eff) values in Si/SiGe FETs. To this purpose we have developed a one-dimensional self-consistent Schrödinger-Poisson simulator and applied it to the study of the mobility behavior of different Si/SiGe FET structures. As a result we propose a structure which, despite to its simple design, shows improved theoretical performance.

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Author information

Authors and Affiliations

  1. DEIS, University of Bologna, Viale Risorgimento 2, 40136, Bologna, Italy

    A. Abramo

  2. AT&T Bell Labs., Murray Hill, NJ, USA

    J. Bude & M.R. Pinto

  3. DII, University of Parma, Parma, Italy

    F. Venturi

  4. DIEGM, University of Udine, Udine, Italy

    E. Sangiorgi

Authors
  1. A. Abramo
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  2. J. Bude
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  3. F. Venturi
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  4. M.R. Pinto
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  5. E. Sangiorgi
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Integrierte Schaltungen, Erlangen, Federal Republic of Germany

    Heiner Ryssel  & Peter Pichler  & 

  2. Institut für Elektronische Bauelemente, Universität Erlangen-Nürnberg, Federal Republic of Germany

    Heiner Ryssel

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© 1995 Springer-Verlag Wien

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Abramo, A., Bude, J., Venturi, F., Pinto, M., Sangiorgi, E. (1995). Performance optimization in Si/SiGe heterostructure FETs. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_25

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_25

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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