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Charge Transport and Scattering Processes in the Many-Valley Model

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Semiconductor Physics

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Abstract

In Chap.2d, Figs.2.25 and 2.26, we have seen that the conduction bands of silicon and germanium near the band edges have constant energy surfaces which are either 8 half-ellipsoids or 6 ellipsoids of revolution; these correspond to 4 and 6 energy valleys, respectively. In these and many other semiconductors the “many-valley-model” of the energy bands has proved to be a fruitful concept for a description of the observed anisotropy of electrical and optical phenomena. Cyclotron resonance (Chap.11 k) provides a direct experimental determination of the effective masses in each valley for any crystallographic direction.

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Seeger, K. (1973). Charge Transport and Scattering Processes in the Many-Valley Model. In: Semiconductor Physics. Springer Study Edition. Springer, Vienna. https://doi.org/10.1007/978-3-7091-4111-3_7

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