Abstract
To overcome limitations of the classic drift-diffusion model, several higher-order transport models such as Stratton’s energy-balance model and Bløtekjær’s hydrodynamic model have been proposed. While for the drift-diffusion model the only transport parameter to be modeled correctly is the carrier mobility, there are many more significant parameters in higher-order models which cannot be directly taken from measurements. These parameters have to be chosen consistently, because otherwise the accuracy of the transport model cannot be properly assessed. Although a considerable number of parameter suggestions exists, it is not clear how well these models work when applied to submicron devices. Here we attempt a practical comparison as consistent as possible.
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Grasser, T., Jungemann, C., Kosina, H., Meinerzhagen, B., Selberherr, S. (2004). Advanced Transport Models for Sub-Micrometer Devices. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_1
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_1
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