Abstract
Ge is considered as a potential channel material for high-performance CMOS device at future technology node for its high and more symmetric carrier mobility.
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Li, Z. (2016). Metal Germanide Technology. In: The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-49683-1_3
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DOI: https://doi.org/10.1007/978-3-662-49683-1_3
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