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Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT

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Field-effect Self-mixing Terahertz Detectors

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Abstract

In this chapter, the fabrication, characterization, and optimization of self-mixing terahertz field-effect detectors based on AlGaN/GaN 2DEG are introduced in details. By fabrication, five different detectors are made to uncover the self-mixing mechanism and search for an optimized detector design. By characterization, we not only obtain the \(I-V\) characteristics, the responsivity, the noise-equivalent power, the response spectrum, the response speed, the polarization effect, etc, but also we probe the localized self-mixing photocurrent based on which the quasi-static detector model and the design of asymmetric antenna are verified. Under the guidance of the detector model, we focus on the design of terahertz antennas and field-effect gate to improve the detector responsivity and sensitivity. An asymmetric antenna with three dipole blocks is found to be the most effective antenna among the five different designs. A design rule for high-sensitivity terahertz detectors is given.

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Authors and Affiliations

  1. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China

    Jiandong Sun

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  1. Jiandong Sun
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Correspondence to Jiandong Sun .

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Sun, J. (2016). Realization of Terahertz Self-Mixing Detectors Based on AlGaN/GaN HEMT. In: Field-effect Self-mixing Terahertz Detectors. Springer Theses. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-48681-8_3

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  • DOI: https://doi.org/10.1007/978-3-662-48681-8_3

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-48679-5

  • Online ISBN: 978-3-662-48681-8

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