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The Theory of Heavily Doped and Highly Compensated Semiconductors (HDCS)

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Electronic Properties of Doped Semiconductors

Part of the book series: Springer Series in Solid-State Sciences ((SSSOL,volume 45))

Abstract

At sufficiently high degrees of compensation all heavily doped semiconductors undergo a transition from metallic to activated conduction. The purpose of this chapter is to calculate critical values of the compensation at which this transition occurs, as well as the activation energy є 1 in the nonmetallic phase. The results strongly depend on whether the impurity distribution in the semiconductor is correlated or it is of a purely Poisson form.

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Authors and Affiliations

  1. A.F. IOFFE Physico-Technical Institute, Academy of Sciences of the USSR, Politekhnicheskaja, 194021, Leningrad, USSR

    Professor Dr. Boris I. Shklovskii & Professor Dr. Alex L. Efros

Authors
  1. Professor Dr. Boris I. Shklovskii
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  2. Professor Dr. Alex L. Efros
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© 1984 Springer-Verlag Berlin Heidelberg

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Shklovskii, B.I., Efros, A.L. (1984). The Theory of Heavily Doped and Highly Compensated Semiconductors (HDCS). In: Electronic Properties of Doped Semiconductors. Springer Series in Solid-State Sciences, vol 45. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-02403-4_13

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  • DOI: https://doi.org/10.1007/978-3-662-02403-4_13

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-662-02405-8

  • Online ISBN: 978-3-662-02403-4

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