Abstract
The X valley plays an important role in hot carrier transport in GaAs [1, 2]. In this paper, we present pump—probe IR absorption measurements to determine the time evolution of electrons in the X 6 valley, the upper limit of the X 6 → Γ 6 scattering time t xΓ the energy separation of the X 6 and X 7 bands at their minima Δ 7–6, and the density of states effective mass of the Xz valley.
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© 1990 Springer-Verlag Berlin, Heidelberg
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Wang, W.B., Ockman, N., Cavicchia, M.A., Yan, M., Alfano, R.R. (1990). Ultrafast Pump—Probe X-Valley Absorption Spectroscopy in GaAs. In: Harris, C.B., Ippen, E.P., Mourou, G.A., Zewail, A.H. (eds) Ultrafast Phenomena VII. Springer Series in Chemical Physics, vol 53. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-84269-6_94
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DOI: https://doi.org/10.1007/978-3-642-84269-6_94
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-84271-9
Online ISBN: 978-3-642-84269-6
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