Abstract
Polythiophene as a free-standing film has been ion implanted with F+ -ions having 25 keV energy. A rapid conductivity increase starts at doses between 5·1015…5 .10 16 F+/cm2. The conductivity changes by 6 orders of magnitude being 1.10−2 Ω−crn−1 at a highest dose of 1·1017 F + /cm2. RBS spectra show that a 0.35...0.40 μm surface layer is damaged. The increasing conductivity is accompanied by a decrease in its activation energy and the optical energy gap at room temperature.
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© 1987 Springer-Verlag Berlin Heidelberg
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Isotalo, H., Stubb, H., Saarilahti, J. (1987). Ion Implantation of Polythiophene. In: Kuzmany, H., Mehring, M., Roth, S. (eds) Electronic Properties of Conjugated Polymers. Springer Series in Solid-State Sciences, vol 76. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83284-0_52
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DOI: https://doi.org/10.1007/978-3-642-83284-0_52
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-83286-4
Online ISBN: 978-3-642-83284-0
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