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Secondary Ion Mass Spectrometry SIMS IV pp 270–274Cite as

SIMS Study of Surface Contamination Due to Ion Implantation

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Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 36))

Abstract

Silicon surface contamination due to ion implantation was found by using secondary ion mass spectroscopy (SIMS). Silicon wafers were prepared by keeping their surface condition as identical as possible. Only minimal, necessary different process steps were received by the samples. All experimental data were analyzed on a comparative basis. Effect of incident ion mass on sputtering phenomena of the target material is discussed.

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References

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Author information

Authors and Affiliations

  1. IBM GTD. Hopewell JCT, New York, USA

    A. C. Yen, A. F. Puttlitz & W. A. Rausch

  2. Essex JCT, Vermont, USA

    A. F. Puttlitz

Authors
  1. A. C. Yen
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  2. A. F. Puttlitz
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  3. W. A. Rausch
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Editor information

Editors and Affiliations

  1. Phsysikalisches Inst., Universität Münster, Münster, D-4400, Fed. Rep. of Germany

    A. Benninghoven

  2. College of General Education, Osaka University, Osaka 560, Japan

    J. Okano

  3. Department of Applied Physics, Osaka University, Osaka 565, Japan

    R. Shimizu

  4. Philips Research Laboratories, Eindhoven, The Netherlands

    H. W. Werner

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© 1984 Springer-Verlag Berlin Heidelberg

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Yen, A.C., Puttlitz, A.F., Rausch, W.A. (1984). SIMS Study of Surface Contamination Due to Ion Implantation. In: Benninghoven, A., Okano, J., Shimizu, R., Werner, H.W. (eds) Secondary Ion Mass Spectrometry SIMS IV. Springer Series in Chemical Physics, vol 36. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-82256-8_72

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  • DOI: https://doi.org/10.1007/978-3-642-82256-8_72

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-82258-2

  • Online ISBN: 978-3-642-82256-8

  • eBook Packages: Springer Book Archive

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