Abstract
The famous 0.84 eV photoluminescence structure arising from recombination at Cr-related defects in GaAs is studied using high resolution Zeeman spectroscopy with magnetic fields up to 10 T. The Zeeman anisotropy for B in the (Oil) and (001) planes is measured. From these results the defect is shown to have a dominant trigonal ((111)-axial) perturbation together with a weaker tetragonal Jahn-Teller distortion. The initial and final states of the photoluminescence are described in terms of a simple effective Hamiltonian which can explain all the essential features of the observed Zeeman splitting and anisotropy. In contrast with GaAs, the Zeeman data for the 1.03 eV photoluminescence observed in GaP(Cr) corresponds to defects with (100) axial symmetry. Posssible reasons for this difference are discussed.
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© 1981 Springer-Verlag Berlin Heidelberg
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Eaves, L., Englert, T., Uihlein, C. (1981). High Magnetic Field Zeeman Splitting and Anisotropy of Cr-Related Photo-Luminescence in Semi-Insulating GaAs and GaP. In: Chikazumi, S., Miura, N. (eds) Physics in High Magnetic Fields. Springer Series in Solid-State Sciences, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-81595-9_15
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DOI: https://doi.org/10.1007/978-3-642-81595-9_15
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