Abstract
The dendritic web growth process is a crystal growth technique which produces thin, long, ribbons of essentially single-crystalline material. The ribbon morphology results from an interaction of crystallographic and surface tension forces so that possible contamination from shaping dies is avoided. Growth is from a melt so that the usual solutes can be used to “dope” the crystals to the desired conductivity type and resistivity. Rejected solutes readily diffuse away from the growth front so that impurities segregate very efficiently as in Czochralski growth. The structural quality of the material is excellent so that all usual semiconductor processing techniques compatible with a (111) orientation are applicable to dendritic web material.
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References
John, H. F., Faust, J. W., Jr.: Controlled dendritic growth of materials with diamond lattice and zinc blende structures. In: Metallurgy of elemental and compound semiconductors. Grubel, R. O. (ed.) pp. 127–148. New York, London: Interscience 1961
Dermatis, S. N., Faust, J. W., Jr.: IEEE Commun. Electron. 65, 94 (1963)
Dushman, S.: Scientific foundations of vacuum technique, 2nd. ed. Lafferty, J. M. (ed.), p. 68. New York, London: Wiley 1962
Barrett, D. L. et al.: J. Electrochem. Soc. 118, 952 (1971)
Seidensticker, R. G. et al.: Computer modeling of dendritic web growth processes and characterization of the material. In: Conf. record 13th IEEE photovoltaic specialists conference. pp. 358–362. IEEE• New York 1978
Duncan, C. S., Hopkins, R. H., Mazelsky, R.: J. Crystal Growth 11, 50 (1971)
Duncan, C. S. et al.: Development of processes for the production of low cost silicon dendritic web for solar cells. In: Conf. record 14th IEEE photovoltaic specialists conference. pp. 25–30. IEEE: New York 1980
Surek, T.: J. Appl. Phys. 47, 4384 (1976)
Hamilton, D. R., Seidensticker, R. G.: J. Appl. Phys. 31, 1165 (1960)
Seidensticker, R. G., Hamilton, D. R.: J. Appl. Phys. 34, 1450 (1963)
Hamilton, D. R., Seidensticker, R. G.: J. Appl. Phys. 34, 3113 (1963)
Seidensticker, R. G., Hamilton, D. R.: J. Phys. Chem. Solids 24, 1585 (1963)
Albon, N., Owen, A.: J. Phys. Chem. Solids 24, 899 (1963)
Longini, R. L., Bennett, A. I., Jr., Smith, W. J.: Appl. Phys. 31, 1204 (1960)
Bennett, A. I., Jr., Longini, R. L.: Phys. Rev. 116, 53 (1959)
Davydov, A. A., Maslov, V. N.: Krystallografiya 9,472 (1964) trans. in Soy. Phys.-Cryst. 9, 393 (1965)
Tucker, T. N., Schwuttke, G. H.: Appl. Phys. Ltrs. 9, 219 (1966)
Hanill, M. D. et al.: J. Crystal Growth 44,34 (1978)
O’Hara, S.: J. Appl. Phys. 37, 3783 (1966)
O’Hara, S., Bennett, A. I., Jr.: J. Appl. Phys. 35, 686 (1964)
Swartz, J. C., Surek, T., Chalmers, B.: J. Electronic Materials 4, 255 (1975)
Ciszek, T.: J. Appl. Phys. 47, 440 (1976)
Duncan, C. S. et al.: Annual report. Silicon web process development. DOE/JPL 954–78/2
Mackintosh, B. J. et al.: Multiple ribbon growth by EFG. In: Conf. record 13th IEEE photovoltaic specialists conference. pp. 350–357. IEEE: New York 1978
Gurtler, R. et al.: The impact of defects on the photovoltaic potential of RTR silicon ribbon. In: Conf. record 13th IEEE photovoltaic specialists conference. pp. 363. IEEE: New York 1978
Gurtler, R.: J. Crystal Growth 50, 69 (1980)
Hall, R. O. A.: Acta Cryst. 14, 1004 (1961)
Logan, R. A., Bond, W. L.: J. Appl. Phys. 30, 332 (1959)
Burenkov, Yu. A., Nikanorov, S. P.: Fiz. Tver. Tela 16, 1496 (1974) trans. in Soy. Phys.-Solid State 16, 963 (1964)
Graham, C. D. et al.: Final report. Research and development of low cost processes for integrated solar arrays. p. 138. ERDA/SE/EC (11–1)-2721/FR/76/1
Boley, B. A., Weiner, J. H.: Theory of thermal stresses. p. 323. New York, London, Sydney: Wiley 1960
Seidensticker, R. G., Hopkins, R. H.: J. Crystal Growth 50, 221 (1980)
Seidensticker, R. G., Stewart, A. M., Hopkins, R. H.: J. Crystal Growth 46, 51 (1979)
Surek, T., Chalmers, B.: J. Crystal Growth 29, 1 (1975)
Kodera, H.: Japan. J. Appl. Phys. 2, 212 (1963)
Thurber, W. R., Mattis, R. L., Liu, Y. M.: J. Electrochem. Soc. 42, 2291 (1980)
Davis, J. R. et al.: Characterization of the effects of metallic impurities on silicon solar cell performance. In: Conf. record 13th IEEE photovoltaic specialists conference. pp. 490–495. IEEE: New York 1978
Hopkins, R. H. et al.: J. Crystal Growth 42, 443 (1977)
Hovel, H. J.: Semiconductors and semimetals. Vol. 11: Solar cells. (Willardson, R. K., Beer, A. C., eds.) p. 23. New York, San Francisco, London: Academic 1975
Campbell, R. B. et al.: Solar cells and modules from dendritic web silicon. In: Conf. record 14th IEEE photovoltaic specialists conference. pp. 332–336. IEEE: New York 1980
Seidensticker, R. G., Scudder, L., Brandhorst, H. W., Jr.: Dendritic web: a viable material for silicon solar cells. In: Conf. record 11th IEEE photovoltaic specialists conference. pp. 299–302. IEEE: New York 1975
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Seidensticker, R.G. (1982). Dendritic Web Growth of Silicon. In: Grabmaier, J. (eds) Silicon Chemical Etching. Crystals, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68765-5_2
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DOI: https://doi.org/10.1007/978-3-642-68765-5_2
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