Abstract
Polycrystalline Mn doped Ge films have been grown on p-type Si substrates. The films show hysteresis loop at room temperature (RT) and saturation magnetization increases with decrease in temperature. The presence of multi-magnetic phases having blocking temperature of ~112 K and Curie temperature above RT is observed. Mn0.05Ge0.95/p-Si heterostructure shows rectification property under forward and reverse bias like a semiconducting diode at RT and works like a spin valve at lower temperature. For a fixed forward bias and at a low temperature, huge change in junction magneto resistance (JMR) is observed.
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One of the authors (S. Bhaumik) acknowledges CSIR, Govt. of India for awarding Senior Research Fellowship.
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Bhaumik, S., Ray, S.K., Das, A.K. (2013). Spin Valve Effect in Mn0.05Ge0.95/p-Si Structure. In: Giri, P.K., Goswami, D.K., Perumal, A. (eds) Advanced Nanomaterials and Nanotechnology. Springer Proceedings in Physics, vol 143. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-34216-5_42
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DOI: https://doi.org/10.1007/978-3-642-34216-5_42
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