Abstract
We treat the basis of bipolar semiconductor lasers. We discuss: condition of gain; joint density of states; gain coefficient; laser equation; bipolar character of the active medium. And we derive, by use of Planck’s radiation law, the Einstein coefficients for an ensemble of two-level systems that is governed by Fermi’s statistics.
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© 2012 Springer-Verlag Berlin Heidelberg
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Renk, K.F. (2012). Basis of a Bipolar Semiconductor Laser. In: Basics of Laser Physics. Graduate Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23565-8_21
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DOI: https://doi.org/10.1007/978-3-642-23565-8_21
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Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-23564-1
Online ISBN: 978-3-642-23565-8
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