Abstract
This chapter reviews the current achievement in realization of single-nanowire and assembled nanowire semiconductor lasers. Lasing conditions and emission mechanisms of single and assembled nanowires are also described. Furthermore, the main difficulties to obtain effective emission from nanowire semiconductor lasers under electrical excitation are discussed.
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Acknowledgements
This work was supported by The Hong Kong Polytechnic University research grant no. 1-ZV6X.
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Yu, S.F. (2012). Lasing Characteristics of Single and Assembled Nanowires. In: Yi, GC. (eds) Semiconductor Nanostructures for Optoelectronic Devices. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-22480-5_9
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DOI: https://doi.org/10.1007/978-3-642-22480-5_9
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