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High Nitrogen Doping During Bulk Growth of SiC

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Silicon Carbide

Part of the book series: Advanced Texts in Physics ((ADTP))

Abstract

Nitrogen is the most important shallow donor impurity in SiC and the ionization energy is lower in the 4H polytype compared to 6H-SiC. Dependent on the lattice site the activation energy is in the 60 meV range for the hexagonal site and is twice as high for the cubic site [2]–[5]. Highly conducting 4H-SiC substrates of high crystalline quality are one of the most important prerequisites for power electronic devices. The specific resistance should be as low as possible and n-type resistivities lower than 10 mΩcm have been reported for both 6H- and 4H-SiC [1].

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Authors and Affiliations

  1. Institut für Kristallzüchtung, Max-Born-Str. 2, 12489, Berlin, Germany

    H.-J. Rost, D. Schulz & D. Siche

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  1. H.-J. Rost
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  2. D. Schulz
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  3. D. Siche
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Editor information

Editors and Affiliations

  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

  2. Department of Electronic Science and Engineering Yoshidahonmachi, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    H. Matsunami

  3. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7/A3, 91058, Erlangen, Germany

    G. Pensl

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Rost, HJ., Schulz, D., Siche, D. (2004). High Nitrogen Doping During Bulk Growth of SiC. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_7

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  • DOI: https://doi.org/10.1007/978-3-642-18870-1_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-62333-2

  • Online ISBN: 978-3-642-18870-1

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