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Hydrogen in SiC

  • Chapter
Silicon Carbide

Part of the book series: Advanced Texts in Physics ((ADTP))

Abstract

Hydrogen is one of the most common impurities in electronics technology with profound and very versatile influence on the electronic characteristics of the semiconductor material. It is of special importance in the case of SiC. Due to the difficulties with bulk crystal growth and diffusion doping, in-growth doped homoepitaxial layers prepared by chemical vapor deposition (CVD) play a crucial role in device processing. Hydrogen is, of course, a natural contaminant of such layers. Even though consequences of this fact have been anticipated, at the time of writing the most recent comprehensive review [1] about state of the art in SiC research, the information about the properties and effects of hydrogen was scarce and not well understood.

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  1. Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Budafokiút 8, 1111, Hungary

    P. Deák, A. Gali & B. Aradi

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  1. P. Deák
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  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

  2. Department of Electronic Science and Engineering Yoshidahonmachi, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    H. Matsunami

  3. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7/A3, 91058, Erlangen, Germany

    G. Pensl

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Deák, P., Gali, A., Aradi, B. (2004). Hydrogen in SiC. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_3

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