Landolt-Börnstein - Group III Condensed Matter
GaN: effective charge, dielectric constants
Abstract
This document is part of Subvolume D 'New Data and Updates for IV-IV; III-V; II-VI and I-VII Compounds; their Mixed Crystals and Diluted Magnetic Semiconductors' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.
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About this content
- Title
- GaN: effective charge, dielectric constants
- Book Title
- New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors
- Book DOI
- 10.1007/978-3-642-14148-5
- Chapter DOI
- 10.1007/978-3-642-14148-5_230
- Part of
- Landolt-Börnstein - Group III Condensed Matter
- Volume
- 44D
- Editors
-
-
U. Rössler
(10)
-
U. Rössler
- Editor Affiliation
-
- 10 Institut für Theoretische Physik, Universität Regensburg, Universitätsstraße 31, 93053, Regensburg, Germany
- Authors
-
-
D. Strauch
(700_230)
-
D. Strauch
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