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Abstract

This paper aims at introducing a reliable on-chip process compensation flow for industrial integrated systems. Among the integrated process compensation techniques, the main one aims at reducing the supply voltage of fast circuits in order to reduce their power consumption while maintaining the specified operating frequency. The proposed design flow includes efficient methodologies to gather/sort on-chip process data but also post-silicon tuning strategies and validation methods at both design and test steps. Concrete results are introduced in this paper to demonstrate the added value of such a methodology. More precisely, it is shown that its application leads to an overall energy reduction ranging from 10% to 20% on fast chips.

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References

  1. Roy, K., Mukhopadhyay, S., Mahmoodi, H.: Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits. Proceeding of the IEEE 91(2) (February 2003)

    Google Scholar 

  2. Granneman, E., Pages, X., Rosseel, E.: Pattern-Dependent Heating of 3d Structures. IEEE, Los Alamitos (2007)

    Google Scholar 

  3. Mukhopadhyay, S., Kim, K., Mahmoodi, H., Roy, K.: Design of a Process Variation Tolerant Self-Repairing SRAM for Yield Enhancement in Nanoscaled CMOS. IEEE Journal of Solid-State Circuits 42(6) (June 2007)

    Google Scholar 

  4. Kanno, Y., Kondoh, Y., Irita, T., Hirose, K., Mori, R., Yasu, Y., Komatsu, S., Mizuno, H.: In-Situ Measurement of Supply-Noise Maps With Millivolt Accuracy and Nanosecond-Order Time Resolution. IEEE Journal of Solid-State Circuits 42(4) (April 2007)

    Google Scholar 

  5. Nourani, M., Radhakrishnan, A.: Testing On-Die Process Variation in Nanometer VLSI. IEEE Design & Test of Computers (2006)

    Google Scholar 

  6. Bhunia, S., Mukhopadhyay, S., Roy, K.: Process Variations and Process-Tolerant Design. In: 20th International Conference on VLSI Design (2007)

    Google Scholar 

  7. Busson, P., Chawla, N., Bach, J., Le Tual, S., Singh, H., Gupta, V., Urard, P.: For anonymous review A 1GHz Digital Channel Multiplexer for Satellite Outdoor Unit Based on a 65nm CMOS Transceiver. In: IEEE International Solid-State Circuits Conference (2009)

    Google Scholar 

  8. Epinat, A., Wilson, R.: Yield Enhancement Methodology for CMOS Standard Cells. In: Proceeding of the 7th International Symposium on Quality Electronic Design, ISQED 2006 (2006)

    Google Scholar 

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Moubdi, N. et al. (2010). Product On-Chip Process Compensation for Low Power and Yield Enhancement. In: Monteiro, J., van Leuken, R. (eds) Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation. PATMOS 2009. Lecture Notes in Computer Science, vol 5953. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-11802-9_29

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  • DOI: https://doi.org/10.1007/978-3-642-11802-9_29

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-11801-2

  • Online ISBN: 978-3-642-11802-9

  • eBook Packages: Computer ScienceComputer Science (R0)

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