Abstract
Scanning electron microscopy (SEM) and cathodoluminescence (CL) in combination with scanning transmission electron microscopy (STEM) have been used to investigate thermally grown amorphous silicon dioxide layers implanted isoelectronically with group IV ions (C+, Si+, Ge+, Sn+, Pb+) as well as with group VI ions (O+, S+, Se+), see Fig.1.
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References
H.-J. Fitting, T. Barfels, A. N. Trukhin, B. Schmidt, A. Gulans, and A. von Czarnowski, J. Non-Cryst. Solids 303 (2002) 218–231.
Roushdey Salh, L. Fitting-Kourkoutis, B. Schmidt, H.-J. Fitting, Physica Status Solidi (a) 204 (2007) 3132–3144
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Fitting, H.J., Salh, R., Kourkoutis, L., Schmidt, B. (2008). Cluster growth and luminescence in ion-implanted silica. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_9
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DOI: https://doi.org/10.1007/978-3-540-85226-1_9
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