Shift in electron energy loss compared for different nickel silicides in a Pt alloyed thin film

Abstract

Nickel monosilicide (NiSi) is a promising material for electrical contacts and interconnects in the latest generation of CMOS devices [1]. Despite already being used in certain industrial applications, there is a lack of information, especially about chemical or structural variations in nanometer scale compounds. With continuing miniaturisation, knowledge of such variations is crucial for successful application. Another important aspect is the thermal stability of the low-resistivity NiSi phase which generally changes into the disilicide (NiSi₂) at a temperature of 700°C. This phase transformation can be shifted towards higher temperatures by alloying with Pt [2].