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Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth

  • Chapter
Springer Handbook of Crystal Growth

Part of the book series: Springer Handbooks ((SHB))

Abstract

A major issue in the growth of semiconductor crystals is the presence of line defects or dislocations. Dislocations are a major impediment to the usage of III–V and other compound semiconductor crystals in electronic, optical, and other applications. This chapter reviews the origins of dislocations in melt-based growth processes and models for stress-driven dislocation multiplication. These models are presented from the point of view of dislocations as the agents of plastic deformation required to relieve the thermal stresses generated in the crystal during melt-based growth processes. Consequently they take the form of viscoplastic constitutive equations for the deformation of the crystal taking into account the microdynamical details of dislocations such as dislocation velocities and interactions. The various aspects of these models are dealt in detail, and finally some representative numerical results are presented for the liquid encapsulated Czochralski (LEC) growth of InP crystals.

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Abbreviations

CFD:

computational fluid dynamics

CFD:

cumulative failure distribution

CRSS:

critical-resolved shear stress

CZ:

Czochralski

IC:

integrated circuit

IC:

ion chamber

LEC:

liquid encapsulation Czochralski

LED:

light-emitting diode

MASTRAPP:

multizone adaptive scheme for transport and phase change processes

ODE:

ordinary differential equation

SWBXT:

synchrotron white beam x-ray topography

TEM:

transmission electron microscopy

VCZ:

vapor pressure controlled Czochralski

fcc:

face-centered cubic

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  1. University of North Texas, 1155 Union Circle, 76203-5017, Denton, TX, USA

    Vishwanath (Vish) Prasad

  2. ASE Technologies Inc., 11499, Chester Road, 45246, Cincinnati, OH, USA

    Srinivas Pendurti

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    Govindhan Dhanaraj Dr.

  2. Department of Geology, University of Mysore, Manasagangotri, 570 006, Mysore, India

    Kullaiah Byrappa Ph.D.

  3. University of North Texas, 1155 Union Circle, 76203-5017, Denton, TX, USA

    Vishwanath Prasad Dr.

  4. Department of Materials Science and Engineering, Stony Brook University, 11794-2275, Stony Brook, NY, USA

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Prasad, V.(., Pendurti, S. (2010). Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_39

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