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Formation of SiGe Heterostructures and Their Properties

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Springer Handbook of Crystal Growth

Part of the book series: Springer Handbooks ((SHB))

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Abstract

The Si/Ge system provides a lot of varieties of materials growth due to the lattice mismatch between Si and Ge. From the point of view of device applications, both pseudomorphic growth and strain-relaxed growth are important. Not only the layer growth but also dot formation is now attracting much attention from both the scientific community and for device applications. Comprehensive studies on the growth mechanisms have resulted in the development of novel formation techniques of SiGe heterostructures and enable us to implement strain effects in Si devices. It is obvious that the device applications largely depend on the material growth, particularly control of surface reaction and formation of dislocations and surface roughness that strongly affect device performances. Here we review the fabrication technology of SiGe heterostructures aiming at growth of high-quality materials. The relaxation of strain of SiGe buffer layers grown on Si substrates is discussed in detail, since many devices are formed on the strain-relaxed buffer layers that are sometimes called virtual substrates. Carbon incorporation and dot formation that are now studied to extend the possibilities of SiGe are discussed in this chapter too.

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Abbreviations

2-D:

two-dimensional

3-D:

three-dimensional

AFM:

atomic force microscopy

AP:

atmospheric pressure

CMOS:

complementary metal–oxide–semiconductor

CMP:

chemical–mechanical polishing

CMP:

chemomechanical polishing

CVD:

chemical vapor deposition

DBR:

distributed Bragg reflector

EB:

electron beam

FET:

field-effect transistor

GSMBE:

gas-source molecular-beam epitaxy

HBT:

heterostructure bipolar transistor

HBT:

horizontal Bridgman technique

HEMT:

high-electron-mobility transistor

HH:

heavy-hole

LH:

light hole

LP:

low pressure

LT:

low-temperature

MBE:

molecular-beam epitaxy

ML:

monolayer

MODFET:

modulation-doped field-effect transistor

MOS:

metal–oxide–semiconductor

MOSFET:

metal–oxide–semiconductor field-effect transistor

NCS:

neighboring confinement structure

NP:

no-phonon

OEIC:

optoelectronic integrated circuit

PL:

photoluminescence

QW:

quantum well

RMS:

root-mean-square

RP:

reduced pressure

RT:

room temperature

RTCVD:

rapid-thermal chemical vapor deposition

SEG:

selective epitaxial growth

SEM:

scanning electron microscope

SEM:

scanning electron microscopy

SGOI:

SiGe-on-insulator

SIMS:

secondary-ion mass spectrometry

SMG:

surfactant-mediated growth

SOI:

silicon-on-insulator

STEM:

scanning transmission electron microscopy

STM:

scanning tunneling microscopy

TEM:

transmission electron microscopy

TO:

transverse optic

UHV:

ultrahigh-vacuum

VLSI:

very large-scale integrated circuit

XP:

x-ray photoemission

XPS:

x-ray photoelectron spectroscopy

XPS:

x-ray photoemission spectroscopy

XRD:

x-ray diffraction

a-Si:

amorphous silicon

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Authors and Affiliations

  1. Advanced Research Laboratories, Musashi Institute of Technology, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, 158-0082, Tokyo, Japan

    Yasuhiro Shiraki

  2. Department of Systems Innovation, Osaka University, 1-3 Machikaneyama-cho, Toyonaka-shi, 560-8531, Osaka, Japan

    Akira Sakai

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    Govindhan Dhanaraj Dr.

  2. Department of Geology, University of Mysore, Manasagangotri, 570 006, Mysore, India

    Kullaiah Byrappa Ph.D.

  3. University of North Texas, 1155 Union Circle, 76203-5017, Denton, TX, USA

    Vishwanath Prasad Dr.

  4. Department of Materials Science and Engineering, Stony Brook University, 11794-2275, Stony Brook, NY, USA

    Michael Dudley Dr.

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Shiraki, Y., Sakai, A. (2010). Formation of SiGe Heterostructures and Their Properties. In: Dhanaraj, G., Byrappa, K., Prasad, V., Dudley, M. (eds) Springer Handbook of Crystal Growth. Springer Handbooks. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74761-1_34

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